gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. features ? gan depletion mode hemt microwave transistor ? common source configuration ? broadband class ab operation ? thermally enhanced cu/mo/cu package ? rohs compliant ? +50v typical operation ? mttf of 114 years (channel temperature < 200c) ? ear99 export classification application ? civilian and military pulsed radar ordering information magx - 003135 - 180l00 180w gan power transistor magx - 003135 - sb3ppr evaluation fixture product description the magx - 003135 - 180l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military radar pulsed applications between 3100 - 3500 mhz. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. the magx - 003135 - 180l00 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. typical rf performance typical rf performance measured in m/a - com rf test fixture. devices tested in common source class - ab configuration as follows: vdd=60v, idq=500ma (pulsed gate bias), f=3.1 - 3.5 ghz, pulse width=300us, duty=10%. freq. (mhz) pin (w peak) pout (w peak) gain (db) rl (db) eff (%) 3100 14 200 11.5 - 16 41 3300 14 192 11.4 - 12 40 3500 14 195 11.5 - 18 41 60v, 300us, 10% freq. (mhz) pin ( w pout ( w peak) gain (db) rl (db) eff (%) 3100 14 217 11.9 - 17 43 3300 14 213 11.8 - 12 42 3500 14 208 11.7 - 17 42 60v, 100us, 10%
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. absolute maximum ratings table (1, 2, 3) supply voltage (vdd) +65v supply voltage (vgg) - 8 to 0v supply current (id1) 10a input power (pin) +37 dbm absolute max. junction/channel temp 200 oc mttf (t j <200c) 114 years pulsed power dissipation (pavg) at 85 oc 192 w thermal resistance, (tchannel = 200 oc) pulsed 500us, 10% duty cycle 0.6 oc/w operating temp - 40 to +95c storage temp - 65 to +150c mounting temperature see solder reflow profile esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v msl level msl1 (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lifetime. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175 parameter test conditions symbol min typ max units dc characteristics drain - source leakage current v gs = - 8v, v ds = 175v i ds - - 12 ma gate threshold voltage v ds = 5v, i d = 30ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5v, i d = 3.5ma g m 5.0 - - s dynamic characteristics input capacitance not applicable - input internally matched c gs n/a n/a n/a pf output capacitance v ds = 50v, v gs = - 8v, f = 1mhz c oss - 26.1 30.3 pf reverse transfer capacitance v ds = 50v, v gs = - 8v, f = 1mhz c rss - 2.3 4.7 pf
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance parameter test conditions symbol min typ max units rf functional tests ( v dd = 60v, i dq = 250ma, 300us pulse / 10% duty, 3.1 - 3.5 ghz) output power pin = 14w peak, 1.4w ave p out 180 194 - w peak power gain pout = 180w peak, 18w ave g p 10.5 11.4 - db drain efficiency pin = 14w peak, 1.4w ave d 38 41 - % load mismatch stability pin = 14w peak, 1.4w ave vswr - s 5:1 - - load mismatch tolerance pin = 14w peak, 1.4w ave vswr - t 10:1 - - f (mhz) z if ( ) z of ( ) 3100 3.0 - j5.5 2.5 - j3.0 3300 2.9 - j5.0 2.3 - j3.1 3500 2.4 - j4.8 1.4 - j2.8 i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. 0.0 50.0 100.0 150.0 200.0 250.0 2.0 6.0 10.0 14.0 18.0 pout(wpk) pin(wpk) peak output power vs. input power 60v, idq=0.25a, 300us/10% 3.1ghz 3.3ghz 3.5ghz 0.0 10.0 20.0 30.0 40.0 50.0 60.0 50.0 100.0 150.0 200.0 250.0 efficiency(%) pout(wpk) efficiency vs. peak output power 60v, idq=0.25a, 300us/10% 3.1ghz 3.3ghz 3.5ghz
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. 8.0 10.0 12.0 14.0 16.0 3 3.1 3.2 3.3 3.4 3.5 3.6 gain (db) freq (ghz) gain vs. frequency 60v, idq=0.25a, 300us/10% - 25.0 - 20.0 - 15.0 - 10.0 - 5.0 0.0 3 3.1 3.2 3.3 3.4 3.5 3.6 rl (db) freq (ghz) return loss vs. frequency 60v, idq=0.25a, 300us/10%
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. test fixture assembly
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - 180l00 preliminary 27 sept 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 7 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. outline drawing turning the device on 1. set v gs to the pinch - off (v p ), typically - 5v 2. turn on v ds to nominal voltage (60v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device sequencing
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